Silicon CVD precursors

Halide Precursors

Silicon Tetrachloride SiCl4

  • Melting point -68.9°C
  • Boiling point 57.0°C
  • Condensed phase density 1.48g/cm3 (at 20°C)
  • Molar mass 169.9 g/mol
SiCl4 saturated vapor pressure
SiCl4 saturated vapor pressure

Silicon Tetrafluoride SiF4

  • Melting point -86.8°C
  • Boiling point -65.0°C
  • Critical temperature -14.15°C
  • Critical pressure 3.75 MPa
  • Molar mass 169.9 g/mol

 

Hexachlorodisilane Si2Cl6

  • Melting point -1°C
  • Boiling point 144°C
  • Condensed phase density 1.56g/cm3 (at 25°C)
  • Molar mass 268.9 g/mol
Si2Cl6 saturated vapor pressure
Hexachlorodisilane (Si2Cl6) saturated vapor pressure

 

Stull, D. R. (1947). Inorganic compounds. Industrial & Engineering Chemistry, 39(4), 540-550.