Skip to content

TRINITRI-Technology LLC

GaN growth and processnig

About us
- Contacts
- Patents
- Papers
- Notebook
Products
R&D
Service

Search site

Search for:

E-mail: info@trinitri.ru
Phone: +7 (921) 960-61-85

194223 Russia, Saint-Petersburg,
Jack Duclos st. 8-1-6

Tags

Aluminum
Boron
CART
CVD
Gallium
GaN
Hafnium
HVPE
IWN2018
Laser Stealth Slicing
LED
Molybdenum
Niobium
Nitrogen
Periodic Table
Precursors
presentation
Reactions
Silicon
Tantalum
Thermal Management
Titanium
Tungsten
Vanadium
Zirconium

Tag: IWN2018

Hydride vapor phase epitaxy system for bulk GaN layers deposition

Presentation at International Workshop on Nitride Semiconductors(IWN 2018)

Presentation ID: TuP-GR-1, 13 November 2018

TRINITRI GaN HVPE Reactor

Posted on November 6, 2018November 29, 2018Categories HVPETags CVD, GaN, HVPE, IWN2018

Lift-off of InGaN LED structure from bulk GaN substrate with femtosecond laser micromachining

Presentation at International Workshop on Nitride Semiconductors(IWN 2018)

Presentation ID: ThP-OD-33, 15 November 2018

Posted on November 5, 2018November 7, 2018Categories UncategorizedTags IWN2018, Laser Stealth Slicing, presentation

Website Built with WordPress.com.

Loading Comments...

Write a Comment...

Email (Required)

Name (Required)

Website