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GaN growth and processnig

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Tag: IWN2018

Hydride vapor phase epitaxy system for bulk GaN layers deposition

Presentation at International Workshop on Nitride Semiconductors(IWN 2018)

Presentation ID: TuP-GR-1, 13 November 2018

TRINITRI GaN HVPE Reactor

Posted on November 6, 2018November 29, 2018Categories HVPETags CVD, GaN, HVPE, IWN2018

Lift-off of InGaN LED structure from bulk GaN substrate with femtosecond laser micromachining

Presentation at International Workshop on Nitride Semiconductors(IWN 2018)

Presentation ID: ThP-OD-33, 15 November 2018

Posted on November 5, 2018November 7, 2018Categories UncategorizedTags IWN2018, Laser Stealth Slicing, presentation

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