Halide/Hydride vapor phase epitaxy
Gallium Monochloride precursor
The reaction is exothermic, and the reaction driving force decreases with increasing temperature:
Typical deposition temperature for epitaxial growth is 800-1100°C. At lower temperatures the deposition rate decreases due to reaction kinetic limitation, at higher temperatures the deposition rate decreases as a result of a decrease in supersaturation:
Gallium trichloride precursor
GaN deposition by reaction of gallium trichloride GaCl3 and ammonia
GaCl3 + NH3 = GaN + 3HCl
is endothermic and the reaction driving force increases with increasing temperature, that makes possible to deposit GaN at temperatures 1300-1400°C:
Maruska, H. P. and Tietjen, J. J., “The preparation and properties of vapor-deposited single-crystalline GaN”, Applied Physics Letters 15, 10 (1969), pp. 327-329.
Ban, Vladimir S., “Mass Spectrometric Studies of Vapor-Phase Crystal Growth II.”, Journal of the Electrochemical Society 119, 6 (1972), pp. 761–765.
Seifert, W. and Fitzl, G and Butter, E., “Study on the growth rate in VPE of GaN”, Journal of Crystal Growth 52 (1981), pp. 257–262.
Fornari, R. and Bosi, M. and Armani, N. and Attolini, G. and Ferrari, C. and Pelosi, C. and Salviati, G., “Hydride vapour phase epitaxy growth and characterisation of GaN layers”, Materials Science and Engineering: B 79, 2 (2001), pp. 159–164.
Usui, A., “Bulk GaN crystal with low defect density grown by hydride vapor phase epitaxy”, дюйм MRS Proceedings vol. 482, no. 1 (, 1997).
Malinovsky, V. V. and Marasina, L. A. and Pichugin, I. G. and Tlaczala, M., “The Growth Kinetics and Surface Morphology of GaN Epitaxial Layers on Sapphire”, Crystal Research and Technology 17, 7 (1982), pp. 835–840.
Koukitu, Akinori and Mayumi, Miho and Kumagai, Yoshinao, “Surface polarity dependence of decomposition and growth of GaN studied using in situ gravimetric monitoring”, Journal of Crystal Growth 246, 3 (2002), pp. 230–236.
Murakami, H., Takekawa, N., Shiono, A., Thieu, Q. T., Togashi, R., Kumagai, Y., … & Koukitu, A. (2016). Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor. Journal of Crystal Growth, 456, 140-144.