Laser Stealth Slicing

Laser Stealth Slicing (LSS) process allows to separate thin GaN films containing device structure from bulk GaN substrates.

LSS.jpg

Main advantages of LSS process:

  • The cut can be made at any depth in range from 5um to 500um.
  • No special sacrificial layers  between film and substrate are required
  • Device structure in not damaged during LSS process

Two implementations of LSS process were developed and patented by TRINITRI:

 

LED structure grown on bulk GaN substrate after LSS and transfer to copper heat sink:

LED-on-Cu