Laser Stealth Slicing

Laser Stealth Slicing (LSS) process allows to separate thin GaN films containing device structure from bulk GaN substrates.


Main advantages of the LSS process:

  • The cut can be made at any depth in the range from 5um to 500um.
  • No sacrificial layers  between film and substrate are required
  • The device structure is not damaged during the LSS process

Two implementations of the LSS process were developed and patented by TRINITRI:


LED structure, grown on a bulk GaN substrate, after the LSS and transfer to copper heat sink: