GaN templates on sapphire

GaN templates manufactured by Hydride Vapor Phase Epitaxy (HVPE)

wafers

  • Diameter – 52 mm (2″)
  • GaN  layer thickness – 10…100 um
  • Sapphire substrate thickness – 450 um
  • Orientation – (0001)
  • Conductivity – n-type (UID)
  • Dislocation density – < 5×107 cm-2 @ GaN layer thickness 50 um

HVPE GaN mesa-templates on sapphire

A characteristic feature of HVPE GaN templates on sapphire is a significant bowing (up to several hundred microns), arising from the difference in the temperature expansion coefficients of GaN and sapphire. Mesa templates were created to reduce the bowing of thick GaN-on-sapphire templates. By dividing of the film into separate mesas the mechanical stresses and bowing are significantly reduced in comparison with the usual template of the same thickness.
fem-results-rusmesa-template-photo
  • Diameter  52 mm (2″)
  • GaN layer thickness GaN  10…50 um
  • Orientation (0001)
  • Conductivity n-type (UID)
  • Dislocation density < 5×107 см-2

To place an order, please contact info@trinitri.ru