GaN substrates

Bulk GaN crystals manufactured by Hydride Vapor Phase Epitaxy (HVPE)

Bulk GaN crystal

Bulk GaN crystal, 5mm thick

• Diameter – 52 mm (2 inch)
• Thickness – up to 5 mm
• Orientation – (0001)
• Conductivity – n-type, UID
• Dislocation density  – < 10⁶ см^-2

Photoluminescence spectrum of bulk GaN manufactured by TRINITRI:

A comparison of the crystal perfection of bulk GaN crystals produced by Trinitri with other samples available on the market.

To place an order, please contact info@trinitri.ru