Bulk GaN crystals manufactured by Hydride Vapor Phase Epitaxy (HVPE)
- Diameter – 52 mm (2 inch)
- Thickness – up to 5 mm
- Orientation – (0001)
- Conductivity – n-type, UID
- Dislocation density – < 106 см-2
Photoluminescence spectrum of bulk GaN manufactured by TRINITRI:
A comparison of the crystal perfection of bulk GaN crystals produced by Trinitri with other samples available on the market.
To place an order, please contact info@trinitri.ru