GaN substrates

Bulk GaN crystals manufactured by Hydride Vapor Phase Epitaxy (HVPE)

  • Diameter – 52 mm (2 inch)
  • Thickness – up to 5 mm
  • Orientation – (0001)
  • Conductivity – n-type, UID
  • Dislocation density  – < 106 см-2

Photoluminescence spectrum of bulk GaN manufactured by TRINITRI:

PL

A comparison of the crystal perfection of bulk GaN crystals produced by Trinitri with other samples available on the market.

XRD

To place an order, please contact info@trinitri.ru