3N1x2 Reactor is a vertical single wafer Hydride Vapor Phase Epitaxy (HVPE) reactor for mass production of GaN crystals with thickness up to 5 mm and diameter of 52 mm (2 inch). A 76mm (3 inch) version is available on demand.
- Epitaxial GaN deposition rates up to 400 um/h
- Bulk epitaxial Aluminum Nitride AlN deposition (optional)
- Bulk epitaxial Gallium Oxide Ga2O3 deposition (optional)
- All metal/ceramics design, no fragile quartzware
- Convenient precursor handling: no boats with molten metals inside the reactor (proprietary external boat design)
- Load lock chamber for continuous operation
- Doping options: C, Si, Ge, Sn, transition metals (Fe, Ti, V, Zr, Nb, Mo, Hf, Ta, W)
- Thin film deposition options for buffer layers and coating: AlN, BN, Si3N4, transition metal nitrides (TiN, NbN, … ), DLC-carbon.
- Type: vertical, hot-wall
- Capacity: one substrate, 52 mm diameter (76 mm diameter – option)
- Process temperature: 500C – 1200C (500C-1500C – optional)
- Substrate rotation: 1 – 100 rpm
- Process pressure: 1 – 800 Torr
- Automated control with custom SCADA software
Bulk GaN crystals with diameter 52 mm and thickness of 5 mm, grown in 3N1x2 Reactor:
Bulk GaN crystal
Bulk GaN crystal, 5mm thick
