Papers

 

  • Light Emitting Diode with Charge Asymmetric Resonance Tunneling, Physica Status Solidi (a) 180 121 (2000)
  • The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes,  N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, A. V. Klochkov, D. A. Lavrinovich, Yu. G. Shreter, Semiconductors 39 795 (2005)
  • Nonuniformity of carrier injection and the degradation of blue LEDs,  N. I. Bochkareva, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, A. V. Klochkov, Yu. G. Shreter, Semiconductors 40 118 (2006)
  • Determination of the coefficient of light attenuation in thin layers of light-emitting diodes,  A. A. Efremov, D. V. Tarkhin, N. I. Bochkareva, R. I. Gorbunov, Yu. T. Rebane, Yu. G. Shreter, Semiconductors 40 375 (2006)
  • Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs, A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, Yu. G. Shreter, Semiconductors 40 605 (2006)
  • Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures,  N. I. Bochkareva, D. V. Tarkhin, Yu. T. Rebane, R. I. Gorbunov, Yu. S. Lelikov, I. A. Martynov, Yu. G. Shreter, Semiconductors 41 87 (2007)
  • Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In0.2Ga0.8N/GaN quantum wells, Yu. S. Lelikov, N. I. Bochkareva, R. I. Gorbunov, I. A. Martynov, Yu. T. Rebane, D. V. Tarkin, Yu. G. Shreter, Semiconductors 42 1342 (2008)
  • Optical properties of blue light-emitting diodes in the InGaN/GaN system at high current densities,  N. I. Bochkareva, R. I. Gorbunov, A. V. Klochkov, Yu. S. Lelikov, I. A. Martynov, Yu. T. Rebane, A. S. Belov, Yu. G. Shreter, Semiconductors 42 1355 (2008)
  • Effect of the electric field on the intensity and spectrum of emission from InGaN/GaN quantum wells,  N. I. Bochkareva, A. L. Bogatov, R. I. Gorbunov, F. E. Latyshev, A. S. Zubrilov, A. I. Tsyuk, A. V. Klochkov, Y. S. Lelikov, Y. T. Rebane, Y. G. Shreter, Semiconductors 43 1499 (2009)
  • Mechanism of the GaN LED efficiency falloff with increasing current, N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, Y. S. Lelikov, F. E. Latyshev, Y. T. Rebane, A. I. Tsyuk, Y. G. Shreter, Semiconductors 44  794 (2010)
  • Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diode,  N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, Y. S. Lelikov, F. E. Latyshev, Y. T. Rebane, A. I. Tsyuk, Y. G. Shreter, Applied Physics Letters 96 133502 (2010)
  • Thick GaN Films Grown on Patterned Sapphire Substrates,  V. Voronenkov, R. Gorbunov, A. Tsyuk, P. Latyshev, Y. Lelikov, Y. Rebane, A. Zubrilov, N. Bochkareva and Y. Shreter, ECS Trans. 35 91 (2011)
  • Effect of growth parameters on stress in HVPE GaN films / A. Tsyuk, R. Gorbunov, V. Voronenkov et al. // ECS Transactions. — 2011. — Vol. 35, no. 6. — P. 73–81.
  • Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density,  N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, P. E. Latyshev, Yu. S. Lelikov, Yu. T. Rebane, A. I. Tsyuk, Yu. G. Shreter, Semiconductors 46 1032 (2012)
  • Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes, N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, P. E. Latyshev, Yu. S. Lelikov, Yu. T. Rebane, A. I. Tsyuk, Yu. G. Shreter, Semiconductors 47 127 (2013)
  • Two modes of HVPE growth of GaN and related macrodefects / V.V. Voronenkov, N.I. Bochkareva, R.I. Gorbunov et al. // Physica Status Solidi (c). — 2013. — Vol. 10, no. 3. — P. 468–471.
  •  Nature of V-Shaped Defects in GaN / V. Voronenkov, N. Bochkareva, R. Gorbunov et al. // Japanese Journal of Applied Physics. — 2013. — Vol. 52, no. 8S. — P. 08JE14.
  • Bochkareva, N. I., Rebane, Y. T., & Shreter, Y. G. (2014). Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells. Semiconductors, 48(8), 1079-1087.
  • Bochkareva, N. I., Rebane, Y. T., & Shreter, Y. G. (2015). Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels. Semiconductors, 49(12), 1665-1670.
  • Bochkareva, N. I. & Shreter, Y. G. (2016). Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen. Semiconductors, 50(10), 1369-1376.
  • Virko, M. V., et al. “On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates.” Semiconductors 50.5 (2016): 699-704.
  • Bochkareva, N. I., et al. “Hopping conductivity and dielectric relaxation in Schottky barriers on GaN.” Semiconductors 51.9 (2017): 1186-1193.
  • Voronenkov, V. V., et al. “On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire.” Semiconductors 51.1 (2017): 115-121.
  • Altakhov, A. S., Gorbunov, R. I., Kasharina, L. A., Latyshev, F. E., Tarala, V. A., & Shreter, Y. G. (2016). Amorphous carbon buffer layers for separating free gallium nitride films. Technical Physics Letters, 42(11), 1076-1078.