Skip to content
TRINITRI LLC Logo

TRINITRI-Technology LLC

GaN growth and processnig

  • About us
    • Contacts
    • Patents
    • Papers
    • Notebook
  • Products
    • HVPE Reactor for Bulk GaN growth
    • Multiwafer HVPE reactor
    • GaN substrates
    • GaN templates on sapphire
    • AlN Templates
    • Radiation Monitor
  • R&D
    • Laser Stealth Slicing
    • Substrate Cloning Technology
    • Substrate-free GaN Devices Manufacturing
  • Service
    • Epitaxy service
    • Custom CVD reactors
    • Pure gas delivery systems
    • Automation and control
    • LED and LD structure modeling and optimization

Search site

E-mail: info@trinitri.ru
Phone: +7 (812) 960-61-85

194223 Russia, Saint-Petersburg,
Jack Duclos st. 8-1-6

Tags

  • Aluminum
  • Boron
  • CART
  • CVD
  • Gallium
  • GaN
  • Hafnium
  • HVPE
  • IWN2018
  • Laser Stealth Slicing
  • LED
  • Molybdenum
  • Niobium
  • Nitrogen
  • Periodic Table
  • Precursors
  • presentation
  • Reactions
  • Silicon
  • Tantalum
  • Thermal Management
  • Titanium
  • Tungsten
  • Vanadium
  • Zirconium

Lift-off of InGaN LED structure from bulk GaN substrate with femtosecond laser micromachining

Presentation at International Workshop on Nitride Semiconductors(IWN 2018)

Presentation ID: ThP-OD-33, 15 November 2018

Download

Laser Stealth Slicing IWN2018

Share this:

  • Twitter
  • Facebook
  • Google
Posted on November 5, 2018November 7, 2018Author voronenkovCategories UncategorizedTags IWN2018, Laser Stealth Slicing, presentation

Post navigation

Previous Previous post: CVD Precursors
Next Next post: Hydride vapor phase epitaxy system for bulk GaN layers deposition
WordPress.com.
Cancel