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TRINITRI-Technology LLC

GaN growth and processnig

  • About us
    • Contacts
    • Patents
    • Papers
    • Notebook
  • Products
    • HVPE Reactor for Bulk GaN growth
    • Multiwafer HVPE reactor
    • GaN substrates
    • GaN templates on sapphire
    • AlN Templates
    • Radiation Monitor
  • R&D
    • Laser Stealth Slicing
    • Substrate Cloning Technology
    • Substrate-free GaN Devices Manufacturing
  • Service
    • Epitaxy service
    • Custom CVD reactors
    • Pure gas delivery systems
    • Automation and control
    • LED and LD structure modeling and optimization

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E-mail: info@trinitri.ru
Phone: +7 (812) 960-61-85

194223 Russia, Saint-Petersburg,
Jack Duclos st. 8-1-6

Tags

  • Aluminum
  • Boron
  • CART
  • CVD
  • Gallium
  • GaN
  • Hafnium
  • HVPE
  • IWN2018
  • Laser Stealth Slicing
  • LED
  • Molybdenum
  • Niobium
  • Nitrogen
  • Periodic Table
  • Precursors
  • presentation
  • Reactions
  • Silicon
  • Tantalum
  • Thermal Management
  • Titanium
  • Tungsten
  • Vanadium
  • Zirconium

Products

Gallium Nitride growth equipment

 

Hydride Vapor Phase Epitaxy (HVPE) Reactor for GaN and AlN growth
3N1x2 HVPE Reactor for bulk GaN growth
HVPE Reachor
Hydride Vapour Phase Epitaxy (HVPE) Reactor for GaN and AlN epitaxy

Hydride Vapor Phase Epitaxy (HVPE) Reactors:

HVPE Reactor for Bulk GaN growth

Multiwafer HVPE reactor

 

Gallium Nitride substrates

 

HVPE GaN substrate
Bulk GaN crystal
HVPE GaN substrate
Bulk GaN crystal, 5mm thick
GaN mesa template on sapphire substrate
GaN templates
GaN templates on sapphire

GaN substrates

GaN templates on sapphire

AlN Templates

Radiation Monitoring

 

scheme
gamma radiation monitor
NMD3 Gamma Radiation Monitor

Gamma Radiation Monitor

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